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INTEGRATED CIRCUITS
DATA SHEET
TDA2615 2 x 6 W hi-fi audio power amplifier
Product specification Supersedes data of July 1994 File under Integrated Circuits, IC01 1995 May 08
Philips Semiconductors
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
FEATURES * Requires very few external components * No switch-on/switch-off clicks * Input mute during switch-on and switch-off * Low offset voltage between output and ground * Excellent gain balance of both amplifiers * Hi-fi in accordance with "IEC 268" and "DIN 45500" * Short-circuit proof and thermal protected * Mute possibility. QUICK REFERENCE DATA Stereo application. SYMBOL VP PO Gv Gv SVRR Vno PARAMETER supply voltage range output power internal voltage gain channel unbalance channel separation supply voltage ripple rejection noise output voltage VS = 12 V; THD = 0.5% CONDITIONS MIN. 7.5 - - - - - - TYP. - 6 30 0.2 70 60 70 GENERAL DESCRIPTION
TDA2615
The TDA2615 is a dual power amplifier in a 9-lead plastic single-in-line (SIL9MPF) medium power package. It has been especially designed for mains fed applications, such as stereo radio and stereo TV.
MAX. 21 - - - - - -
UNIT V W dB dB dB dB V
ORDERING INFORMATION TYPE NUMBER TDA2615 PACKAGE NAME SIL9MPF DESCRIPTION plastic single in-line medium power package with fin; 9 leads VERSION SOT110-1
1995 May 08
2
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
BLOCK DIAGRAM
TDA2615
+ VP 7 VA V ref1
TDA2615
680 VB INV1 1 20 k 4 k 5 k V ref3 10 k + V ref2 1/2 V P / GND 3 Vref1 voltage comparator 10 k - V ref2 - VP 20 k 9 8 680 VB - VP - VP
20 k CM
4
OUT1
MUTE
2
+ VP
+ VP THERMAL PROTECTION
VA V B
6 CM
OUT2
INV2 INV1, 2
20 k
V ref1 VA 5
MLA711
- VP
Fig.1 Block diagram.
1995 May 08
3
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
PINNING SYMBOL -INV1 MUTE
1 2VP/GND
TDA2615
FUNCTIONAL DESCRIPTION
PIN 1 2 3 4 5 6 7 8 9
DESCRIPTION non-inverting input 1 mute input
1 2
supply voltage or ground
The TDA2615 is a hi-fi stereo amplifier designed for mains fed applications, such as stereo radio and stereo TV. The circuit is optimally designed for symmetrical power supplies, but is also well-suited to asymmetrical power supply systems. An output power of 2 x 6 W (THD = 0.5%) can be delivered into an 8 load with a symmetrical power supply of 12 V. The gain is internally fixed at 30 dB, thus offering a low gain spread and a very good gain balance between the two amplifiers (0.2 dB). A special feature is the input mute circuit. This circuit disconnects the non-inverting inputs when the supply voltage drops below 6 V, while the amplifier still retains its DC operating adjustment. The circuit features suppression of unwanted signals at the inputs, during switch-on and switch-off. The mute circuit can also be activated via pin 2. When a current of 300 A is present at pin 2, the circuit is in the mute condition. The device is provided with two thermal protection circuits. One circuit measures the average temperature of the crystal and the other measures the momentary temperature of the power transistors. These control circuits attack at temperatures in excess of +150 C, so a crystal operating temperature of max. +150 C can be used without extra distortion. With the derating value of 6 K/W, the heatsink can be calculated as follows:
OUT1 -VP OUT2 +VP INV1, 2 -INV2
output 1 supply voltage (negative) output 2 supply voltage (positive) inverting input 1 and 2 non-inverting input 2
INV1 MUTE 1/2 VP / GND OUT1 VP OUT2 + VP INV1, 2 INV2
1 2 3 4 5 6 7 8 9
MLA708
TDA2615
at RL = 8 and VS = 12 V, the measured maximum dissipation is 7.8 W. With a maximum ambient temperature of +60 C, the thermal resistance of the heatsink is: 150 - 60 R th = --------------------- - 6 = 5.5 K/W 7.8 The metal tab has the same potential as pin 5.
Fig.2 Pin configuration.
1995 May 08
4
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
LIMITING VALUES In accordance with the Absolute maximum System (IEC 134). SYMBOL VP IOSM Ptot Tstg Txtal Tamb tsc Note supply voltage non-repetitive peak output current total power dissipation storage temperature range crystal temperature ambient operating temperature range short-circuit time short-circuit to ground; note 1 see Fig.3 PARAMETER CONDITIONS - - - -55 - -25 - MIN.
TDA2615
MAX. 21 4 15 +150 +150 +150 1
UNIT V A W C C C h
1. For asymmetrical power supplies (with the load short-circuited), the maximum unloaded supply voltage is limited to VP = 28 V and with an internal supply resistance of RS 4 , the maximum unloaded supply voltage is limited to 32 V (with the load short-circuited). For symmetrical power supplies the circuit is short-circuit-proof up to VP = 21 V. THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER thermal resistance from junction to case VALUE 6 UNIT K/W
MCD368 - 2
16 Ptot (W) 12 infinite heatsink
8 R th-hs = 5.5 K/W
4
0 - 25
0
50
100
150
Tamb ( o C)
Fig.3 Power derating curve.
1995 May 08
5
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
CHARACTERISTICS SYMBOL Supply VP IORM VP Iq(tot) PO THD B Gv Gv Vno Zi SVRR cs Ibias VGND V4-6 VO Z2-7 Iq(tot) Vno SVRR VGND Voff I2 VP IP VO Vno SVRR VGND supply voltage range repetitive peak output current - 2.2 12 - PARAMETER CONDITIONS MIN. TYP.
TDA2615
MAX.
UNIT
21 -
V A
Operating position; note 1 supply voltage range total quiescent current output power total harmonic distortion power bandwidth voltage gain gain unbalance noise output voltage input impedance supply voltage ripple rejection channel separation input bias current DC output offset voltage DC output offset voltage between two channels note 4 RS = 0 note 3 RL = THD = 0.5% THD = 10% PO = 4 W THD = 0.5%; note 2 7.5 18 5 6.5 - - 29 - - 14 40 46 - - - - - RL = note 3 note 4 18 - 40 - - - 12 40 6 8 0.15 20 to 20000 30 0.2 70 20 60 70 0.3 30 4 21 70 - - 0.2 - 31 1 140 26 - - - 200 150 V mA W W % Hz dB dB V k dB dB A mV mV
MUTE POSITION (AT IMUTE 300 A) output voltage mute input impedance total quiescent current noise output voltage supply voltage ripple rejection DC output offset voltage offset voltage with respect to operating position current if pin 2 is connected to pin 5 VI = 600 mV 0.3 9 40 70 55 40 4 - - 30 0.3 70 55 40 1.0 - 70 140 - 200 150 6 mV k mA V dB mV mV mA
Mute position; note 5 supply voltage range total quiescent current output voltage noise output voltage supply voltage ripple rejection DC output offset voltage RL = VI = 600 mV note 3 note 4 2 9 - - 40 - 5.8 40 1.0 140 - 200 V mA mV V dB mV
1995 May 08
6
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
SYMBOL PARAMETER CONDITIONS MIN. TYP.
TDA2615
MAX.
UNIT
Operating position; note 6 Iq(tot) PO THD B Gv Gv Vno Zi SVRR cs VO Z2-7 Iq(tot) Vno SVRR Voff I2 Notes 1. VP = 12 V; RL = 8 ; Tamb = 25 C; fi = 1 kHz; symmetrical power supply IMUTE = < 30 A (see Fig.4). 2. The power bandwidth is measured at a maximum output power (POmax) of -3 dB. 3. The noise output voltage (RMS value) is measured at RS = 2 k, unweighted (20 Hz to 20 kHz). 4. The ripple rejection is measured at RS = 0 and fi = 100 Hz to 20 kHz. The ripple voltage (200 mV) is applied in phase to the positive and the negative supply rails. With asymmetrical power supplies, the ripple rejection is measured at fi = 1 kHz. 5. VP = 4 V; RL = 8 ; Tamb = 25 C; fi = 1 kHz; symmetrical power supply (see Fig.4). 6. VP = 24 V; RL = 8 ; Tamb = 25 C; fi = 1 kHz; asymmetrical power supply IMUTE < 30 A (see Fig.5). 7. The internal network at pin 2 is a resistor divider of typical 4 k and 5 k to the positive supply rail. At the connection of the 4 k and 5 k resistor a zener diode of typical 6.6 V is also connected to the positive supply rail. The spread of the zener voltage is 6.1 to 7.1 V. total quiescent current output power total harmonic distortion power bandwidth voltage gain gain unbalance noise output voltage input impedance supply voltage ripple rejection channel separation note 3 THD = 0.5% THD = 10% PO = 4 W THD = 0.5%; note 1 18 5 6.5 - - 29 - - 14 35 - VI = 600 mV note 7 note 3 note 4 - 6.7 18 - 35 - - 40 6 8 0.13 40 to 20000 30 0.2 70 20 44 45 70 - - 0.2 - 31 1 140 26 - - 1.0 11.3 70 140 - 150 6 mA W W % Hz dB dB V k dB dB
MUTE POSITION (IMUTE 300 A) output voltage mute input impedance total quiescent current noise output voltage supply voltage ripple rejection offset voltage with respect to operating position current if pin 2 is connected to pin 5 0.3 9 40 70 44 4 - mV k mA V dB mV mA
1995 May 08
7
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
TEST AND APPLICATION INFORMATION
TDA2615
mute input 2 680 7 20 k 2200 F
+ VP
220 nF VI
4 1 22 nF 20 k 3 20 k
TDA2615
8.2
R L= 8 100 nF
220 nF VI
9 6 22 nF 8 680 20 k 8.2 5 - VP R L= 8
MLA710 - 2
2200 F
Fig.4 Test and application circuit with symmetrical power supply.
1995 May 08
8
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
TDA2615
mute input 2 680
VP 100 nF 7 20 k
RS 2200 F
VS
220 nF VI
4 1 22 nF 20 k 3 8.2 internal 1/2 VP 20 k 680 F R L= 8
100 F
TDA2615
220 nF VI
9 6 22 nF 8 680 20 k 8.2 5 680 F R L= 8
MLA709 - 1
Fig.5 Test and application circuit with asymmetrical power supply.
1995 May 08
9
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
PACKAGE OUTLINE SIL9MPF: plastic single in-line medium power package with fin; 9 leads
TDA2615
SOT110-1
D
D1 q P P1 A2
A3 q1 q2
A A4 seating plane E pin 1 index
L 1 Z b2 e b b1 wM 9 Q
c
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 18.5 17.8 A2 max. 3.7 A3 8.7 8.0 A4 15.8 15.4 b 1.40 1.14 b1 0.67 0.50 b2 1.40 1.14 c 0.48 0.38 D (1) 21.8 21.4 D1 21.4 20.7 E (1) 6.48 6.20 e 2.54 L 3.9 3.4 P 2.75 2.50 P1 3.4 3.2 Q 1.75 1.55 q 15.1 14.9 q1 4.4 4.2 q2 5.9 5.7 w 0.25 Z (1) max. 1.0
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT110-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-02-25
1995 May 08
10
Philips Semiconductors
Product specification
2 x 6 W hi-fi audio power amplifier
SOLDERING Plastic single in-line packages BY DIP OR WAVE The maximum permissible temperature of the solder is 260 C; this temperature must not be in contact with the joint for more than 5 s. The total contact time of successive solder waves must not exceed 5 s. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified storage maximum. If the printed-circuit board has DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values REPAIRING SOLDERED JOINTS
TDA2615
been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
Apply the soldering iron below the seating plane (or not more than 2 mm above it). If its temperature is below 300 C, it must not be in contact for more than 10 s; if between 300 and 400 C, for not more than 5 s.
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 May 08
11
Philips Semiconductors - a worldwide company
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Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 SCD39 (c) Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
513061/1500/03/pp12 Document order number: Date of release: 1995 May 08 9397 750 00122
Philips Semiconductors

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